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  Datasheet File OCR Text:
 GP30N THRU GP30Y
SINTERED GLASS JUNCTION PLASTIC RECTIFIER
VOLTAGE:1100V to 1600V CURRENT: 3.0A
FEATURE
High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350C /10sec/0.375"lead length at 5 lbs tension Operate at Ta =55C with no thermal run away Typical Ir<0.1A
DO-201AD
MECHANICAL DATA
Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case:Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity:color band denotes cathode Mounting position:any Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25C, unless otherwise stated, for capacitive load, derate current by 20%)
SYMBOL
GP 30N
1100 770 1100
GP 30Q
1200 840 1200
GP 30T
1300 910 1300 3.0
GP 30V
1400 980 1400
GP 30W
1500 1050 1500
GP 30Y
1600 1120 1600
units
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage Maximum Average Forward Rectified Current 3/8"lead length at Ta =55C Peak Forward Surge Current 8.3ms single Half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage at 3.0A Maximum full load reverse current full cycle Average at 55C Maximum DC Reverse Current Ta =25C at rated DC blocking voltage Ta =150C Typical Reverse Recovery Time (Note 1) Typical Junction Capacitance Typical Thermal Resistance (Note 2) (Note 3)
Vrrm Vrms Vdc If(av) Ifsm Vf Ir(av) Ir Trr Cj R(ja) Tstg, Tj
V V V A A V
125.0 1.2 100.0 5.0 100.0 3.0 40.0 20.0 -65 to +175
A A A S
pF
Storage and Operating Junction Temperature
C /W C
Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8"lead length, P.C. Board Mounted Rev.A1 www.gulfsemi.com
RATINGS AND CHARACTERISTIC CURVES GP30N THRU GP30Y
1
Rev.A1
www.gulfsemi.com


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